Effect Of O-2-Doping On Bonding Configuration And Electric Properties Of Sicoh Films Prepared By Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

Carbon-doping oxide materials (SiCOH films) with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from the mixture of decamethylcyclopentasioxane (D5) and oxygen (O-2). This paper investigates the effect of O-2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O-2-doping amount. For the SiCOH film deposited under O-2 flow of 3 cm(3)/min, the dielectric constant k as low as 2.62 and leakage current of 8.2 x 10(-9) A/Cm-2 can be obtained.