Temperature Effects Of Csi(Tl) Crystal Detector With Apd Readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.