Metallic Oxide P-I-N Junctions With Ferroelectric As The Barrier

The authors report the formation of the metallic oxide p-I-n junctions with the ferroelectric (Ba,Sr)TiO(3) (BST) as the barrier. The junctions with different thicknesses of BST are investigated. With appropriate thickness, the junctions possess definite parameters, such as the negligible reversed current density (<= 10(-7) A/cm(2)), large breakdown voltage (> 7 V), and ultrahigh rectification (> 2x10(4)) in the bias voltage <= 2.0 V and temperature range from 5 to 300 K. It is under consideration that the built-in field V(0), the ferroelectric reversed polarized field V(rp), and the resistivity of the BST layer together decide the transport properties of the junctions. (c) 2007 American Institute of Physics.