Silicon optical emitter in CMOS technology

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings(2007)

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摘要
A silicon optical emitter, including a light emitting device (LED) and a LED driver circuit, was realized in a standard 0.35μm CMOS technology. The LED operates in reverse breakdown mode and can be turned on at 8.3V An output optical power of 13.6 nW was measured at 10V and 100mA, and the calculated emitted intensity was more than 1 mW/cm2. The optical spectrum of the silicon LED is between 500-820nm with a clear peak near 770nm. © 2006 IEEE.
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关键词
cmos integrated circuits,spectrum,optical spectrum,si,light emitting diodes,cmos technology,silicon
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