Growth And Properties Of Some Relaxor-Based Ferroelectric Single Crystals With High Curie Temperature By The Solution Bridgman And Modified Bridgman Techniques

The solution Bridgman technique and modified Bridgman one have been used to grow the binary system 0.65Pb(In1/2Nb1/2)O-3-0.35 PbTiO3 (starting composition) and ternary system 0.28Pb(In1/2Nb1/2)O-3-0.40Pb(Mg1/3Nb2/3) O-3-0.32PbTiO(3) single crystals, respectively. The obtained PINT66/34 crystals show high T-c (269 degrees C), T-rt (134 degrees C) and good piezoelectric properties (d(33)similar to 2000pC/N) on the (001) cuts. Whereas, the as-grown PIMNT single crystals have reached the size of phi 45mmx80mm boules and 25x25x1mm wafers. The large PIMNT crystals exhibit not only ultrahigh piezoelectric properties (d(33)similar to 1700-2200pC/N, epsilon similar to 5000 and k(33)similar to 92%) on (001)-cuts, but also higher Curie temperature (T-c>190 degrees C), higher rhombohedral-tetragonal transition temperature (T-rt similar to 120 degrees C) and higher coercive field (E-c similar to 10.88kV/cm) than PMNT or PZNT crystals near their morphotropic phase boundary.