Influence of substrate temperature on the properties of indium tin oxide films deposited by reactive evaporation

The indium tin oxide films with different substrate temperature have been prepared on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 0.14 Pa. In this research, the deposition rate is 0.1 Å·sec-1. The best ITO films we obtained have an electrical resistivity of 4.35 × 10-4 Ω·cm, a carrier concentration of 4.02 × 1020 cm-3 and a Hall mobility of 67.5 cm2v-1s-1. The influences of substrate temperature on the structural, optical and electrical properties of the obtained films have been investigated.