13.2 W continuous wave output 1540 nm semiconductor laser array module

InGaAsP/InP double-step gradient refractive index (GRIN) separated-confinement-heterostructure multi-quantum-well (SCH MQW) structure laser module with an emission wavelength of 1540 nm was grown. Laser bars with a stripe width of 100 μm and a filling factor of 20% was fabricated. The back high-reflection (HR) coating is 3(Si/Al2O3) and the front anti-reflection (AR) coating is Al2O3. The module's continuous wave (CW) output power reaches to 13.2 W at a current of 50 A. The threshold current is 10 A and the central wavelength is 1535.5 nm with a FWHM of 6.5 nm. Characteristic temperature T0 of 68 K is obtained when the temperature of the active region is in the range of 20-50°C.