Ferroelectric Properties Of Pb(Zr,Ti)O-3 Thin Films Integrated At Low Temperatures On Lanio3-Buffered Glass

We report on the fabrication and characterization of Pb(Zr,Ti)O-3 (PZT) thin films integrated on glass using lanthanum nickel oxide (LaNiO3) template layer/electrodes. The electrodes were deposited by means of sputtering and PZT thin film prepared by sol-gel and spin-coating techniques. The whole ferroelectric stack was treated by single annealing at 480degreesC for 30 min. Xray diffraction revealed PZT has a pure perovskite phase with random orientation. The ferroelectric tests indicated the film exhibits excellent ferroelectric properties (remnant polarization up to 30 mum/cm(2)).