Broaden Buried Oxide Layer Of Soi Structure In Simox Using Water Plasma

A study was performed on broaden buried oxide (BOX) layer of silicon on insulator (SOI) structure in separation by implantation of oxygen (SIMOX) using water plasma. The BOX thickness of SOI materials fabricated by the water ion implantation method and the conventional low-dose SIMOX process was compared. Secondary ion mass spectroscopy (SIMS) results revealed that there are two hydrogen enrichment peaks around the damaged regions induced by oxygen ion irradiation in the as-implanted samples, and two peaks correspond to the two interfaces of the BOX in the annealed samples.