Oxygen-Deficiency-Activated Anomalous Transport In La2/3sr1/3mno3-Delta Thin Films Deposited By Laser Ablation

Jm Liu,Yx Zhang,Zg Liu,Yw Du, Hh Zhang,Z Yu,Ck Ong

JOURNAL OF PHYSICS-CONDENSED MATTER(2002)

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摘要
The transport in oxygen-deficient polycrystalline La2/3Sr1/3MnO3-delta thin films deposited on Si(l 11) substrates using laser ablation is studied by measuring the resistivity and ac magnetic susceptibility over the range 2-300 K. The oxygen deficiency results in a serious shift of the insulating-metal (IM) transition toward the low-temperature side and anomalous transport behaviour over the low-temperature range. The ac susceptibility measurement reveals that, upon cooling, the sample exhibits a ferromagnetic transition, a weak anomaly at the IM transition and an antiferromagnetic (AFM) transition which may mainly arise from the charge ordering. Partial melting of the AFM state under a low magnetic field of 750 Oe is observed at 4.2 K.
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关键词
partial melting,magnetic field,magnetic susceptibility,thin film deposition
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