Simulation on poly-Si TFT AM-OLED pixel

The J-V characteristics of the poly-Si TFT/OLED coupling pair and the I-V characteristics of Poly-Si TFT current mirror are simulated and analyzed as a pixel unit of current programmed Poly-Si TFT AM-OLED. Since an inverted structure of OLED is adopted, the N type Poly-Si TFT can be used as current sink so that the performance of the pixel can be further improved. In the end, the simulated characteristics are also compared to those of current programmed a-Si TFT AM-OLED.