Growth of SiO2 films by ECR-PECVD for planar optical waveguide and its properties

SiO2 films, which can be used in planar optical waveguide, were grown on Si substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition. Various factors affecting SiO2 deposition rate, such as microwave power, gas flow ratio of oxygen and silane, and substrate temperature were investigated to optimize the film growth conditions. The film growth, its microstructures and its optical properties were studied with X-ray photoelectron, Fourier transform infrared spectroscopy and scanning tunnel microscopy, etc.. The results show that high quality, uniform and continuous SiO2 films can be grown at low temperatures. In addition, Ge doped SiO2 films were also grown and studied.