Dynamical characteristics of electroluminescence in zinc sulfide thin film devices doped with erbium

The dynamical characteristics of electroluminescence in zinc sulfide thin film devices doped with erbium prepared by thermal evaporation with two boats are reported. The transient process of the thin film luminescence is described by a compound function including the product of an exponential function and a Gaussian function. The results fitted with this function are in good agreement with the experimental data. It is worthing to point out that the trap level may influence the relaxation effect of luminescence of devices.