New simple method to optimize the parameters of deep-submicron MOSFET's

In this presentation, we propose a new simple method to optimize the parameters of the deep-submicron MOSFET's, namely, maximizing the nominal driving current at constant worst case (i.e. considering technology fluctuation) off-state current. Although there are only one object and one constraint in this optimizing procedure, the effects of subthreshold S factor, channel carrier mobility, source/drain resistance, drain induced barrier lowering (DIBL) and Vth roll-off are all considered. To demonstrate the capability of this method, it is used to optimize the source/drain junction depth for 0.1 μm MOSFET. The results show that junction depth as shallow as 0.02 μm is needed to maximize the driving current for uniform channel doped MOSFET.