A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

To alleviate the thermal transfer problem and floating body effects in SOI devices, a new device structure called DSOI (Drain/Source On Insulator) is proposed and analyzed in this paper. The effectiveness of thermal resistance reduction is demonstrated using our new simple analytical: model, which tales account of the cross-device therm; coupling effects for the first time. The predications of the model agree well with the 2-D numerical simulation and experimental results. The device simulation results show that BULK, SOI, and DSOI devices deliver almost the same amount of driving current in similar to 0.1 mu m regime even without considering the self-heating effects. And the DSOI structure speed advantage becomes more prominent if self-heating effects art included.