A deep level transient spectroscopic study of boron-ion-implanted Si1-xGex/Si single quantum wells

The defects induced by boron-ion implantation with a relatively low dosage of 1 x 10(12) cm(-2) in Si1-xGex/Si single quantum wells are studied by deep level transient spectroscopy (DLTS). For low Ge content x, a defect level H-2 at an energy of 0.52 eV above the silicon valence band edge was found in the well region and its boundaries. For samples with higher Ge content, such that the strain is released, an electron trap E-2 rather than H-2 is formed by the ion implantation. Rapid thermal annealing at 600 degrees C removes most of the H-2 defects induced by the ion implantation without changing the properties of the quantum well.