X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

The strain of the MBE grown silicon layer doped with boron was measured by X-ray double crystal diffraction after rapid thermal annealing at 800-1100��C. It was found that the strain is partially relaxed. The lattice mismatch between the epilayer and silicon substrate is proportional to the substitutional boron concentration, the coefficient is 5.1. Based on these results, it was suggested that the generation and activation of boron clusters is the main cause of the change in lattice quality and the electrical properties of the epilayer.