Fabrication and polarization-modulated resistive switching behavior of predominantly (110)-oriented BiFeO 3 thin films on indium tin oxide/glass substrates

Predominantly (110)-oriented BiFeO 3 (BFO) thin films were deposited on indium tin oxide/glass substrates using a metal organic decomposition process by controlling the preheating temperature. The structure evolution with film thickness at different preheating temperatures was investigated to clarify the growth mode of (110)-predominant BFO film. The formation of the (110)-oriented BFO film is due to the low-temperature nucleation of (110)-oriented grains preheated at 425 °C. In the Au/BFO(110)/ITO heterostructure, a polarization-modulated bistable resistive switching behavior with high ratio of resistance and large diode current characteristics was observed, which makes the heterostructure attractive for application in resistive ferroelectric memory.