Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

The importance of multicarrier contributions to electrical conductivity in epitaxial InN layered structures has been debated for last few years. In this work hydrostatic pressure was used to verify multicarrier conduction in nominally undoped InN layers with In-growth polarity. To distinguish between different types of carriers the mobility spectrum analysis was applied, based on conductivity tensor components sigma(xx) and sigma(xy) measured as a function of magnetic field. Different contributions to the electric conduction ( including the surprising presence of holes) and their evolution with pressure have been shown. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim