Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy

Hao Li,Xiangbo Zeng,Ping Yang,Xiaodong Zhang,Xiaobing Xie,Jingyan Li,Qiming Wang

Electron Device Letters, IEEE（2013）

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摘要

The interface state level at amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions is identified with surface photovoltage spectroscopy (SPS). A positive slope alteration of SPS in 1.2 eV indicates there is a primarily empty state at Ev(c-Si)+0.75 eV. Using hydrogen plasma treatment (HPT) on c-Si surface, we observed a systematic variation in the SPS signal upon HPT time, which was associated to the change of interface state density. Our results show that the SPS can be used to optimize the heterojunction with intrinsic thin-layer solar cell preparation process.

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关键词

hpt,surface photovoltage,positive slope alteration,electron volt energy 1.2 ev,intrinsic thin-layer solar cell preparation process,interface state density,interface state level,amorphous semiconductors,sps,surface photovoltage spectroscopy,amorphous-crystalline silicon heterojunctions,hydrogen,hydrogen plasma treatment,interface states,heterojunction,defect level,silicon,solar cells,plasma materials processing,elemental semiconductors

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