Dislocation Scattering in ZnMgO/ZnO Heterostructures

Ling Sang,Shaoyan Yang,Guipeng Liu,Guijuan Zhao,Changbo Liu,ChengYan Gu,Hongyuan Wei,Xianglin Liu,Qinsheng Zhu,Zhanguo Wang

Electron Devices, IEEE Transactions（2013）

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摘要

The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as Ndis=1.5 × 108 cm-2 and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.

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关键词

interface roughness scattering,wide band gap semiconductors,semiconductor heterojunctions,interface roughness,electron density,heterostructures,sheet dislocation density,dislocation scattering,low-electron concentration region,irs parameters,ii-vi semiconductors,znmgo-zno,electron mobility,low-temperature mobility,mobility,zinc compounds,dislocation density,interface-roughness scattering,znmgo/zno heterostructures,magnesium compounds

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