BaZrxTi2-xO5 thin films prepared by sol-gel method

BaZrxTi2-xO5 thin films (x = 0, 0.01, 0.02, 0.03 and 0.04) were prepared by sol-gel method. The effect of the Zr content on microstructure and electrical properties of BaZr xTi2-xO5 thin films was investigated. The single-phase BaZrxTi2-xO 5 films were obtained at 700 °C with x = 0-0.02, and 800-900 °C with x = 0-0.04. With increasing the Zr content, the annealing temperature to obtain the single BaTi2O5 phase increased. The dielectric and ferroelectric properties were improved due to the Zr substitution. The BaZrxTi2-xO5 thin film with x = 0.02 had the maximum dielectric constant (εr) of 53 at 1 MHz, and the BaZrxTi2-xO5 thin film with x = 0.01 had the maximum remnant polarization (2Pr) of 1.37 μC cm-2. © 2013 Elsevier B.V. All rights reserved.