Dual-Direction Nanocrossbar Array ESD Protection Structures

Li Wang,Xin Wang,Zitao Shi,Rui Ma,Jian Liu,Zhongyu Dong,Chen Zhang,Lin Lin,Hui Zhao,Lijie Zhang,Albert Wang,Yuhua Cheng,Ru Huang

Electron Device Letters, IEEE（2013）

引用 36|浏览46

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摘要

This letter reports a new nanocrossbar array ESD protection design. The unique nanocrossbar array structures ensure uniform ESD discharging and achieve fast ESD response speed and >; 8A ESD protection capability in prototypes. The nanoswitching ESD protection effect eliminates large leakage current inherent to traditional p-n-junction-type ESD protection devices.

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关键词

nanocrossbar array,p-n-junction-type esd protection devices,p-n junctions,integrated circuit reliability,leakage current,leakage currents,nanoswitching esd protection effect,esd protection,nanocrossbar array structures,integrated circuit design,electrostatic discharge,nanoelectronics,prototypes,switches,tunneling

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