InGaAs-based large area photoconductive emitters for 1.55 µm excitation

Ming Xu,M Mittendorff,R J B Dietz,Thorsten Gobel,Harald Schneider,Manfred Helm,S Winnerl

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz（2013）

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摘要

We present a scalable large-area terahertz (THz) emitter designed for excitation with 1.55 μm pump radiation. It is based on an InGaAs heterostructure combined with a microstructured electrode pattern. Electric fields of more than 2.5 V/cm in the THz focus are reached, the spectrum of the pulses extends up to 3 THz.

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关键词

iii-v semiconductors,electrodes,gallium arsenide,indium compounds,photoconductivity,semiconductor heterojunctions,terahertz wave spectra,ingaas,thz focus,electric fields,excitation,heterostructure,large area photoconductive emitters,large-area terahertz emitter,microstructured electrode pattern,pulse spectrum,pump radiation,wavelength 1.55 mum

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