A compact diode array model for phase change memory application

This paper describes a physical compact diode array model for driving devices in Phase Change Memory (PCM) application. This model is valid for various structural parameters including geometry parameters and doping concentrations. Based on the distributions of carrier current, a rigorous derivation of the leakage coefficient from classical diode equations and the simplified bipolar device formulations has been performed. The model is extensively verified by comparisons with measured data, and it is useful for the studying of physical mechanism in carrier transmission. This concise model has an open model structure, and can be applied in different fabrication process with the parameter extraction to illustrate the device physics.