Numerical study on Schottky-barrier double-gate MOS transistor with recessed channel and asymmetric contact

In the letter, a new Schottky-barrier double-gate n-metal-oxide-semiconductor field effect transistor (MOSFET) with a recessed channel and asymmetric contact is presented and studied numerically. The numerical simulation demonstrated that the recessed channel, double-gate structure, and asymmetric source/drain Schottky-contacts not only can effectively suppress short-channel effects, but also yield a smaller off-current and a larger driven current, e.g., an on/off ratio as high as 10(6) and an on-state current of 780 mu A/mu m with a supply voltage of 1.0 Volt. These characteristics make the presented MOS transistors potentially suitable for logic and memory applications.