Kinetic mechanism of ZnO hexagonal single crystal slices on GaN/sapphire by a layer-by-layer growth mode

Hexagonal single crystal ZnO slices were prepared on a GaN/sapphire substrate by a chemical bath deposition method at low temperature. The ZnO slices were characterized by electron microscopy and photoluminescence spectroscopy. The nature of the kinetic mechanisms of the two-dimensional hexagonal ZnO slices' growth is explored. The formation of the slices involves several important processes: an ion adsorption competition mechanism, the forming of a nuclear center, diffusion of the nanoclusters and ripening of the ZnO cluster and a layer-by-layer growth process.