1 eV In0.3Ga0.7As subcell towards the high-efficiency inverted metamorphic solar cells

Jingfeng Bi,Guijiang Lin,JianQing Liu,Minghui Song,Liangjun Wang,Weiping Xiong,Zhiming Wu,Zhidong Lin

AIP Conference Proceedings（2012）

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摘要

On the way to the industrial application of inverted metamorphic triple junction solar cell, the 1 eV In03Ga0.7As subcell epitaxial grown by MOCVD on InxGa1-xP graded buffer layers were reported here. The structural analysis of XRD, SEM, TEM, and SIMS were carried out. The I-V and EQE characterizations were measured under the 1000 suns AM 1.5D conditions. Those results extended the industrial vista of the high efficiency, low dislocation density, current matching solar cells.

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关键词

III-V semiconductors,X-ray diffraction,High-resolution transmission electron microscopy (HRTEM)

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