The role of H-plasma on aluminum-induced crystallization of amorphous silicon

We propose a technique to improve and accelerate aluminum-induced crystallization (AIC) by hydrogen plasma. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-silicon thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22 to 42 cm 2 /V s. The possible mechanism of AIC assisted by hydrogen radicals is also discussed.