Growth of high quality AlN on sapphire with multi-growth approaches

Yuhua Li,S. C. Chen,Wen Tian,Senlin Li,Heng Wang,Jianbao Zhang,Zhihao Wu,Y. Y. Fang,Jiangnan Dai,Changqin Chen

Information Optoelectronics, Nanofabrication and Testing, IONT 2012（2012）

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摘要

Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire substrates. The results show that the crystal quality can be significantly improved by the employment of the multi-growth approaches. © 2012 OSA.

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