Mobility Spectrum Analysis Of Ion-Etching-Induced P-To-N Type Converted Layers In Hgcdte Single Crystal

In this paper, we study the magneto-transport properties of ion-etching-induced p-to-n type converted layers in Hg1-xCdxTe (x=0.24) single crystal with the help of mobility spectrum analysis (MSA) technique. Hall measurement shows that the residual p-HgCdTe completely converted to n-type after ion etching. By step-by-step chemical etching, MSA reveals that ion-etching-induced conversion results in a damaged surface layer with low electron mobility while a bulk n-type region exhibits higher electron mobility. It can be observed that the mobility of the surface electrons is independence of temperature in the measured temperature range. In contrast, the bulk electrons exhibit classical behavior of n-HgCdTe with characteristics that are strongly dependence on temperature. The Hall data from different thickness shows the bulk n-layer is uniform with high mobility and lower concentration.