A coupled algorithm of finite volume method with monte-carlo method for simulating transient radiation effects of semiconductor devices

Yuan Wei,Honggang Xie,Ding Gong,Jinhui Zhu,Shengli Niu

2012 Spring World Congress on Engineering and Technology, SCET 2012 - Proceedings（2012）

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摘要

A coupled algorithm of FVM (Finite-Volume Method) with MC (Monte-Carlo) Method for particle transport has been developed in order to study the transient radiation response of semiconductor devices from device-level. A code based on GEANT4 is also built to trace the incident particle and to give the distribution of ionized charges, which acts as a source term in semiconductor governing equations. The transient response of irradiated devices is obtained by solving these equations numerically with FVM, and a part of results is compared with MEDICI's, which agree well. ©2012 IEEE.

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关键词

coupled algorithm,device-level simulation,monte-carlo method,transient radiation effects,monte carlo method,semiconductor devices,finite volume method,monte carlo methods,mathematical model,transient response

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