Parameter extraction of nano-scale MOSFET by a forward gated-diode method

The forward gated-diode method is used in this paper to extract the dielectric oxide thickness and body doping concentration of nano-scale MOSFETs, especially when both of the variables are unknown previously. Firstly the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current is derived from the device physics. And then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate an excellent agreement with those extracted from the forward gated-diode method.