Synthesis and characterization of amorphous SiO x nanowires prepared by vapor phase transport process

Large quantities of amorphous SiOx nanowires have been synthesized by vapor phase transport process under atmospheric pressure in a horizontal furnace. The fabricated materials have been fully characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS). The nanowires have a typical length up to several tens of micrometers and a diameter in the range of 100nm to 300nm. The formation mechanism of the nanowires has also been discussed. The covering boats and the weight ratio of the raw materials were regarded to play an important role during the growth of the nanowires.