Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

Materials Science in Semiconductor Processing(2012)

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摘要
We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80K and the lasing order of each peak is unrelated with each other when injection current increases. Laser spectra obtained under fixed current for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while the width of lasing spectra gradually narrows when the operating temperature increased. The lasing process of quantum dot laser is obviously different from that of a reference quantum well laser in the same wavelength region. In addition, very high wavelength stability of 0.088nm/K in the temperature range of 80–300K is obtained, which is 6.2 times better than that of reference quantum well laser.
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关键词
Semiconductor laser,Quantum dot laser,Indium phosphide,Gas source molecular beam epitaxy
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