High frequency response of amorphous tantalum oxide thin films
Components and Packaging Technologies, IEEE Transactions（2001）
摘要
Amorphous tantalum oxide films were deposited using a pulsed dc reactive magnetron sputtering technique at low temperature (⩽200°C). A test vehicle (metal-insulator-metal structure) was designed and fabricated for the high frequency characterization of the dielectric thin film. The dielectric constant and loss tangent of the amorphous tantalum oxide thin film were measured using dc, time domain reflectometry (TDR), and network analyzer up to 10 GHz. The measured dielectric constant and loss tangent was 22 and 0.007, respectively from 1 KHz to 10 GHz. The high frequency properties of the amorphous tantalum oxide thin film show little dispersion up to 10 GHz. However, the resonance oscillation due to the parasitics is evident between 10 GHz and 40 GHz and depends on the capacitor area. Modeling of the equivalent circuits would allow us to identify the parasitic components and their effects on the measured scattering parameters
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关键词
tantalum compounds,dielectric loss tangent,dielectric constant,equivalent circuit model,dielectric thin films,amorphous tantalum oxide thin film,s-parameters,high-frequency properties,time domain reflectometry,200 c,ta2o5,mim devices,capacitors,mim capacitor,1 khz to 40 ghz,equivalent circuits,resonance oscillation,network analyzer,dielectric losses,sputtered coatings,amorphous state,permittivity,scattering parameters,pulsed dc reactive magnetron sputtering,low temperature deposition,parasitic component,indexing terms,oscillations,s parameters,frequency response,thin film,amorphous materials,high frequency,transistors,sputtering,equivalent circuit,magnetron sputtering,frequency domain,time domain
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