High pressure behavior of electronic states in GaAs/Ga1−xAlxAs multiple quantum wells

The high pressure behavior of electronic states in GaAs/GaAlAs multiple quantum wells was investigated at 80K. It was found that the pressure dependence of the exciton energy Γ 1e,hh was nonlinear. The nonlinearity may be due to the pressure-induced transition of the Ga 1−x Al x As barrier layers from a direct to an indirect band structure, and the resulting decrease of the effective barrier height.