Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces

We investigate the properties of semipolar InGaN/GaN quantum wells (OWs) emitting in the blue and green spectral region. A single QW is grown on inverse V-shaped GaN pyramids which are formed by selective area epitaxy on a template masked with different hexagonally ordered patterns. Using photo- and locally resolved cathodoluminescence measurements the high material quality of the semipolar planes could be confirmed (full width at half maximum (FWHM) of D(0)X: 2.6meV). Furthermore, it was found that the InGaN QW emission wavelength within one pyramid depends on the facet type as well as on the position along the facet. (C) 2009 The Japan Society of Applied Physics