Cmos Receivers In The 100-140 Ghz Range

S. P. Voinigescu, M. Khanpour, S. T. Nicolson, A. Tomkins, E. Laskin,A. Cathelin,D. Belot

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3(2009)

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摘要
This paper reviews recent research conducted at the University of Toronto on the development of imaging and radio transceivers in CMOS, aimed at operation in the 100-GHz to 200-GHz range. Two receivers fabricated in 65-nm GPLP CMOS technology are described. The first is a 90-100 GHz IQ receiver with 7-dB noise figure, 10.5-dB downconversion gain and fundamental frequency VCO. The second receiver has a double-sideband architecture and operates in the 135-145 GHz range and features an 8-dB gain LNA, a double-balanced Gilbert cell mixer and a dipole antenna.
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关键词
CMOS millimeter-wave integrated circuits,millimeter-wave imaging,MOS devices,millimeter-wave antenna,low-noise receivers
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