Comparison of deposition models for a TEOS LPCVD process

Microelectronics Reliability(2007)

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摘要
We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to SEM measurements.
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