Contact Pressure Dependence of Carrier Mobility in Cleaved Tetracene Single-Crystal Field-Effect Transistors

Tomoyuki Nisikawa,Naoki Moriguchi,Takashi Anezaki,Akira Unno,Masaru Tachibana,Kenichi Kojima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS（2006）

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摘要

Tetracene single-crystal field-effect transistors (FETs) were fabricated using fresh cleaved tetracene single crystals. In order to obtain a fine contact between the tetracene crystals and the substrate, a stress was applied using an Instron-type machine. Carrier mobility was measured as a function of applied stress and it was observed that 0.5 cm(2)/(VS) was the highest mobility under the optimum applied stress.

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organic materials and devices,other semiconductors,semiconductor surfaces and interfaces,defects in crystals,mechanical,acoustical,and rheological properties

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