Nonvolatile Thin Film Transistor Memory with Ferritin

The low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash Memory is a potential candidate as a key component of the system on panel (SOP). We have proposed the "bio-nano-process" for the fabrication of nanodots by using biotechnology. Tit this study, we have successfully fabricated and developed a LTPS-TFT flash memory with biomineralized inorganic nanodots for the first, time. High-density homogeneous nanodots were made to adsorb on a silicon film by using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of a flash memory for a SOP.