Topology impact on the room temperature performance of THz-range ballistic deflection transistors.

ABSTRACTIn this paper, the Ballistic Deflection Transistor (BDT) is reviewed for variations in performance of the device with respect to geometry modifications like change in gate length, side branch angle and permittivity. Experimental study is done for different gate lengths and same study is then done using Silvaco modeling tool to corroborate the behavior of model used. It is confirmed that the performance of BDT can be enhanced by using a complete gate configuration where gate runs along the channel. Silvaco simulations are also used to study the effect of different side channel angles. It is found that for a specific angle of 60 degrees, the output current is maximum. Any angle other than this gives smaller current values. Simulations are also used to study the effect of variation in the dielectric constant filled in the trenches between channel and gate. It is observed that high permittivity dielectrics enhance the output.