Lasing at 1.28 /spl mu/m of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition

J. Tatebayashi,M. Ishida,N. Hatori,H. Ebe,H. Sudou,A. Kuramata,M. Sugawara,Y. Arakawa

IEEE Journal of Selected Topics in Quantum Electronics（2005）

引用 19|浏览7

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摘要

We report the device characteristics of stacked InAs-GaAs quantum dot (QD) lasers cladded by an Al/sub 0.4/Ga/sub 0.6/As layer grown at low temperature by metal-organic chemical vapor deposition. In the growth of quantum dot lasers, an emission wavelength shifts toward a shorter value due to the effect of postgrowth annealing on quantum dots. This blueshift can be suppressed when the annealing tem...

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关键词

Quantum dots,US Department of Transportation,Chemical vapor deposition,Quantum dot lasers,Chemical lasers,MOCVD,Distributed feedback devices,Temperature,Semiconductor lasers,Molecular beam epitaxial growth

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