N-2 Plasma Treatment Effects Of Sinx Buffer Layer For Low Temperature Process

To adopt thin film transistor (TFT) type FRAM, low temperature process is necessary. SiNx has good properties and advantages as a low temperature processed buffer layer. The SiNx films were grown on the p-Si(100) substrate by the transformer coupled plasma chemical vapor deposition (TCP-CVD). By employing N-2 plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) curve disappeared. After N-2 plasma treatment, a leakage current was decreased about 2 orders. The memory window of low temperature processed (at 550degreesC) metal-ferroelectric-insulator-silicon (MFIS) capacitor was as large as about 1.5 V.