Radiation Hardness And Annealing Tests Of A Custom Vlsi Device

A Breakstone,S Parker,C Adolphsen,A Litke, A Schwarz, M Turala,V Luth

IEEE Transactions on Nuclear Science(1987)

引用 7|浏览8
暂无评分
摘要
Several NMOS custom VLSI ("Microplex") circuits have been irradiated with a 500 rad/hr 60Co source. With power off three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200°C was only partially successful in restoring the chips to useful operating conditions.
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要