Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopy

Imaging of topography, locally induced photoluminescence and Fermi-level pinning in adjacent ordered and disordered domains on a cleaved GaInP sample is performed using a near-field scanning optical microscope and scanning capacitance microscope at room temperature in air. Highly localized photoluminescence spectra obtained by the near-field scanning optical microscope on these domains show spectral peaks at 680 nm (ordered) and 648 nm (disordered) GaInP. The near-field scanning optical microscope and scanning capacitance microscope data confirm previously published data, indicating that the electronic surface structure of ordered GaInP is significantly different from that of disordered GaInP. Both approaches indicate that the Fermi-level at the surface of ordered GaInP is pinned, while the Fermi-level at the surface of disordered GaInP is not pinned. The size, structure, and position of the ordered and disordered domains observed by the near-field scanning optical microscope and scanning capacitance microscope agree with those obtained by cathodoluminescence and Kelvin probe force microscopy. (C) 1996 American Vacuum Society.