Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

Masao Kondo,Nobuyuki Sugii,Yutaka Hoshino,Wataru Hirasawa,Yoshinobu Kimura,Masafumi Miyamoto,Toru Fujioka,Shiro Kamohara,Yasuichi Kondo,Shin'ichiro Kimura,Isao Yoshida

IEEE Transactions on Electron Devices（2006）

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摘要

A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si0.85Ge0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating ...

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关键词

cellular radio,Ge-Si alloys,mobile handsets,MOSFET,power amplifiers,silicon

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