Aluminum Reflow Behavior in Via-Hole Filling Investigated by Molecular Dynamics Simulation and Computer Graphics

We have performed molecular dynamics simulation to study the fine structure of Al thin layer and Al reflow behavior in a temperature range of 300 K-1400 K. We have shown that at 300 K the Al atoms on the insulator surface do not migrate toward the via-hole. With increasing the temperature, the mobility of all the Al atoms increased and the via-hole was completely filled with the Al atoms at 1400 K, This acceleration of Al reflow behavior due to the rise of the temperature is in qualitatively good agreement with the experimental result. Furthermore, we clarified the dynamic transformation process of an Al thin-layer on SiO2 surface tu all Al plug filling in the via-hole on an atomic scale. Hence, the effectiveness and the applicability of the molecular dynamics method to investigate the Al reflow behavior related to the fabrication of an electronic device were strongly confirmed.