InAs pixel matrix detectors fabricated by diffusion of Zn in a metal-organic vapour-phase epitaxy reactor

We introduce a zinc diffusion process to fabricate an InAs-based detector matrix using an atmospheric pressure metal-organic vapour-phase epitaxy reactor. Current–voltage characteristics are measured and different diffusion parameters are experimented. Spectral alpha radiation response of the diode is reported. To our knowledge, this is the first time that InAs was used as an alpha particle detector.